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R6507ENXC7G

¥21.17
单 FET、MOSFET
ROHM Semiconductor

650V 7A TO-220FM, LOW-NOISE POWE

参数名称 参数值
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 665mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 25 V
FET Feature -
Power Dissipation (Max) 46W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack

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ROHM Semiconductor 单 FET、MOSFET 产品 R6507ENXC7G

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