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SCT3017ALGC11

¥849.24
单 FET、MOSFET
ROHM Semiconductor

650V, 118A, THD, TRENCH-STRUCTUR

参数名称 参数值
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 118A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 22.1mOhm @ 47A, 18V
Vgs(th) (Max) @ Id 5.6V @ 23.5mA
Gate Charge (Qg) (Max) @ Vgs 172 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2884 pF @ 500 V
FET Feature -
Power Dissipation (Max) 427W
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3

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ROHM Semiconductor 单 FET、MOSFET 产品 SCT3017ALGC11

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