| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 118A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 22.1mOhm @ 47A, 18V |
| Vgs(th) (Max) @ Id | 5.6V @ 23.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 172 nC @ 18 V |
| Vgs (Max) | +22V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 2884 pF @ 500 V |
| FET Feature | - |
| Power Dissipation (Max) | 427W |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247N |
| Package / Case | TO-247-3 |
新闻资讯
ROHM Semiconductor 单 FET、MOSFET 产品 SCT3017ALGC11
作为ROHM Semiconductor优质且资深的代理服务商， 在为您采购SCT3017ALGC11时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买SCT3017ALGC11绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解SCT3017ALGC11产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
SCT3017ALGC11供应商,SCT3017ALGC11现货,SCT3017ALGC11代理商,SCT3017ALGC11pdf参数资料,买SCT3017ALGC11,SCT3017ALGC11报价,SCT3017ALGC11库存
