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SCTWA35N65G2VAG

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单 FET、MOSFET
STMicroelectronics

SICFET N-CH 650V 45A TO247

参数名称 参数值
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 72mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 Long Leads
Package / Case TO-247-3

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STMicroelectronics 单 FET、MOSFET 产品 SCTWA35N65G2VAG

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