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CSD19505KTT

¥23.69
单 FET、MOSFET
Texas Instruments

MOSFET N-CH 80V 200A DDPAK

参数名称 参数值
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7920 pF @ 40 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DDPAK/TO-263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

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Texas Instruments 单 FET、MOSFET 产品 CSD19505KTT

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