| 参数名称 | 参数值 |
|---|---|
| Product Status | Not For New Designs |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V |
| Power - Max | 120mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | VMT6 |
新闻资讯
ROHM Semiconductor FET、MOSFET 阵列 产品 VT6M1T2CR
作为ROHM Semiconductor优质且资深的代理服务商， 在为您采购VT6M1T2CR时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买VT6M1T2CR绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解VT6M1T2CR产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
VT6M1T2CR供应商,VT6M1T2CR现货,VT6M1T2CR代理商,VT6M1T2CRpdf参数资料,买VT6M1T2CR,VT6M1T2CR报价,VT6M1T2CR库存
