| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate, 4V Drive |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V, 56mOhm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 5V, 8.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V, 850pF @ 10V |
| Power - Max | 2W (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOP |
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